Journal article
Polythiophene-perylene diimide heterojunction field-effect transistors
SR Puniredd, A Kiersnowski, G Battagliarin, W Zaja̧czkowski, WWH Wong, N Kirby, K Müllen, W Pisula
Journal of Materials Chemistry C | ROYAL SOC CHEMISTRY | Published : 2013
DOI: 10.1039/c3tc00562c
Abstract
Thin film field-effect transistors based on binary blends of poly(3-hexylthiophene) (P3HT) and two perylene diimide (PDI) derivatives with different alkyl substituents have been investigated in terms of device performance, microstructure and molecular organization on the surface. For the same blend ratios the PDIs phase separate differently due to solubility variation. Blends with a horizontal phase separation between the donor and acceptor show ambipolar behavior due to well defined homogenous pathways for both charge carriers. In this layer arrangement the polymer is located near the dielectric interface, while the PDI molecules crystallize on top of the film. Interestingly, the electron m..
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Awarded by European Commission
Funding Acknowledgements
The authors thank G. Glasser and I. Lieberwirth for the cross-sectional SEM images and also for helpful discussions. This work was financially supported by the ERC Advanced Grant NANOGRAPH (AdG-2010-267160), Australian Solar Institute (Fellowship for W. W. H. Wong and project grant), Australian Research Council (DP0877325), the AAS-BMBF Australia-Germany Solar Photovoltaic Research Exchange Program, the German Science Foundation (Korean-German IR TG), the European Community's Seventh Framework Programme ONE-P (grant agreement no. 212311), DFG Priority Program SPP 1355, DFG MU 334/32-1, DFG Priority Program SPP 1459, and ESF Project GOSPEL (Ref Nr: 09-EuroGRAPHENE-FP-001). A. Kiersnowski acknowledges the support from Marie Curie Intra European Fellowship (PIEF-GA-2009-253521) granted within 7th EU Framework program. The temperature dependent GIWAXS experiments were undertaken on the SAXS/WAXS beamline at the Australian Synchrotron, Victoria, Australia.